NTLJF3117PTAG【PDF 2/8 页】MOSFET P-CH 20V 2.3A 6-WDFN

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NTLJF3117P

SCHOTTKY DIODE MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)

Peak Repetitive Reverse Voltage

DC Blocking Voltage

Average Rectified Forward Current

Parameter

Symbol

V RRM

V R

I F

Value

30

30

2.0

Unit

V

V

A

THERMAL RESISTANCE RATINGS

Parameter

Junction-to-Ambient – Steady State (Note 3)

Junction-to-Ambient – t ≤ 5 s (Note 3)

Junction-to-Ambient – Steady State Min Pad (Note 4)

Symbol

R q JA

R q JA

R q JA

Max

83

54

177

Unit

° C/W

3. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).

4. Surface Mounted on FR4 Board using the minimum recommended pad size of 30 mm 2 , 2 oz Cu.

MOSFET ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain-to-Source Breakdown Voltage

Drain-to-Source Breakdown Voltage

Temperature Coefficient

V (BR)DSS

V (BR)DSS /T J

V GS = 0 V, I D = -250 m A

I D = -250 m A, Ref to 25 ° C

-20

9.95

V

mV/ ° C

Zero Gate Voltage Drain Current

I DSS

V DS = -16 V, V GS = 0 V

T J = 25 ° C

T J = 85 ° C

-1.0

-10

m A

Gate-to-Source Leakage Current

I GSS

V DS = 0 V, V GS = ± 8.0 V

± 100

nA

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

V GS(TH)

V GS = V DS , I D = -250 m A

-0.4

-0.7

-1.0

V

Negative Threshold

V GS(TH) /T J

2.44

mV/ ° C

Temperature Coefficient

Drain-to-Source On-Resistance

R DS(on)

V GS = -4.5, I D = -2.0 A

75

100

m W

V GS = -2.5, I D = -2.0 A

V GS = -1.8, I D = -1.6 A

101

150

135

200

Forward Transconductance

g FS

V DS = -5.0 V, I D = -2.0 A

3.1

S

CHARGES, CAPACITANCES AND GATE RESISTANCE

Input Capacitance

C ISS

531

pF

Output Capacitance

Reverse Transfer Capacitance

C OSS

C RSS

V GS = 0 V, f = 1.0 MHz,

V DS = -10 V

91

56

Total Gate Charge

Threshold Gate Charge

Gate-to-Source Charge

Gate-to-Drain Charge

Gate Resistance

Q G(TOT)

Q G(TH)

Q GS

Q GD

R G

V GS = -4.5 V, V DS = -10 V,

I D = -2.0 A

5.5

0.7

1.0

1.4

8.8

6.2

nC

W

SWITCHING CHARACTERISTICS (Note 6)

Turn-On Delay Time

t d(ON)

5.2

ns

Rise Time

Turn-Off Delay Time

Fall Time

t r

t d(OFF)

t f

V GS = -4.5 V, V DD = -5.0 V,

I D = -1.0 A, R G = 6.0 W

13.2

13.7

19.1

5. Pulse Test: Pulse Width v 300 m s, Duty Cycle v 2%.

6. Switching characteristics are independent of operating junction temperatures.

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